首页> 外文OA文献 >Quantum Well Based on Graphene and Narrow-Gap Semiconductors
【2h】

Quantum Well Based on Graphene and Narrow-Gap Semiconductors

机译:基于石墨烯和窄间隙半导体的量子阱

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

We consider the energy spectrum of the planar quantum well which consisted oftwo ribbons of narrow-gap semiconductors and a graphene ribbon between ones. Itis shown that the gapless mode appears only in case of inverted narrow-gapsemiconductors. Spin splitting of the energy spectrum for a nonsymmetricquantum well is calculated taking into account a specificity of graphene. Weinvestigate interface states and optical transitions. It is shown that theoptical transitions are possible only with a conservation of a parity.
机译:我们考虑了平面量子阱的能谱,它由两个窄带半导体带和一个石墨烯带组成。结果表明,无间隙模式仅在倒置窄间隙半导体的情况下出现。考虑到石墨烯的特异性,计算了非对称量子阱的能谱自旋分裂。我们研究界面状态和光学跃迁。结果表明,只有在保持奇偶性的情况下,光学跃迁才可能发生。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号